国际研究团队开发无损刻蚀技术用于光电器件半导体

国际研究团队开发了一种“自刻蚀”技术,用于加工柔软且不稳定的离子晶格半导体,特别是二维钙钛矿薄层单晶,而不会损坏其结构,从而克服了光电材料领域的一个关键挑战。该研究由中国科学技术大学、普渡大学和上海科技大学的研究人员领导,于周四发表在《自然》杂志上。

这项研究引入了一种引导式的“自刻蚀”方法,利用晶体生长过程中积累的内部应力。通过使用温和的配体-异丙醇(IPA)溶液系统,研究人员在二维钙钛矿单晶的特定位置诱导受控的平面内自刻蚀。随后,他们精确地将不同卤素组成的二维钙钛矿填充到刻蚀的空腔中。这使得在单个晶圆内创建高质量的异质结,具有晶格连续性和原子级平滑界面。

在半导体光电领域,异质结——不同化学成分材料在原子水平上的界面——允许精确控制每个空腔的光学性能。通过调整这些刻蚀区域中的卤素,研究人员可以设计具有可调发射颜色和亮度的像素状单元,这是向小型化和高效光电器件迈出的关键一步。

与传统方法如强溶剂处理或紫外线图案化相比,这种新策略更温和,保留了晶格免受损伤。

研究团队成员张舒晨表示:“这种加工方法表明,未来我们可能在超薄材料上集成密集排列的不同颜色的微观发光像素。它为高性能发光和显示设备开辟了新的材料平台和设计路径。”

这项突破为光电半导体加工提供了创新途径,有望推动下一代显示和照明技术的进步。

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