中国科学家正研发先进2D半导体材料，生长速度提升1000倍，有望用于LED、光电探测器和激光器等光电子领域，突破摩尔定律限制。
摩尔定律预测半导体容量每两年翻一番，但随着芯片尺寸不断缩小，物理限制使性能进一步提升变得越来越困难。
在2D半导体中，通过添加微量其他元素（掺杂）可改变其导电能力，产生n型（负型）和p型（正型）材料。虽然存在许多n型2D半导体，如二硫化钼和二硒化钼，但高性能且稳定的p型材料稀缺。
国防科技大学朱孟健在《科技日报》周四报道中表示：“芯片中的晶体管需要n型和p型材料成对工作。高性能p型材料的缺乏已成为亚5纳米节点2D半导体发展的关键瓶颈，也是激烈争夺的科学与技术前沿。”
这种先进材料在光电子领域展现潜力，可用于LED、光电探测器和激光器，推动下一代‘2D芯片’发展。
A team from Nanjing University’s School of Integrated Circuits and Huawei has developed the first molybdenum disulfide-based multi-bit parallel microprocessor.
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A team led by Wu Zhenping at Beijing University of Posts and Telecommunications has confirmed in Science Advances that kappa-gallium oxide exhibits stable ferroelectricity at room temperature, enabling it to store data like a memory device while serving as a high-power transmitter. This breakthrough could allow for smaller, more powerful military electronics in Chinese fighters, potentially leaving US F-22 radars two generations behind.
Researchers at the University of Science and Technology of China have developed the Jiuzhang 4.0 photonic quantum computing prototype, which manipulates 3,050 photons and sets a new record.