中国科学家正研发先进2D半导体材料，生长速度提升1000倍，有望用于LED、光电探测器和激光器等光电子领域，突破摩尔定律限制。
摩尔定律预测半导体容量每两年翻一番，但随着芯片尺寸不断缩小，物理限制使性能进一步提升变得越来越困难。
在2D半导体中，通过添加微量其他元素（掺杂）可改变其导电能力，产生n型（负型）和p型（正型）材料。虽然存在许多n型2D半导体，如二硫化钼和二硒化钼，但高性能且稳定的p型材料稀缺。
国防科技大学朱孟健在《科技日报》周四报道中表示：“芯片中的晶体管需要n型和p型材料成对工作。高性能p型材料的缺乏已成为亚5纳米节点2D半导体发展的关键瓶颈，也是激烈争夺的科学与技术前沿。”
这种先进材料在光电子领域展现潜力，可用于LED、光电探测器和激光器，推动下一代‘2D芯片’发展。
Chinese researchers have announced a new technique to mass-produce 2D material wafers, paving the way for high-performance electronics using a successor to silicon. Two-dimensional materials such as molybdenum disulfide, with their atomically thin structure, are regarded as promising successors for the post-Moore’s Law era due to their high carrier mobility and low power consumption. However, a core obstacle to commercialisation has been the difficulty of producing them uniformly over large areas and at a high quality.
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Chinese researchers have achieved a breakthrough in ferroelectric transistors (FeFETs), overcoming long-standing limitations of traditional versions and paving the way for large-scale applications. These transistors function similarly to neurons in the human brain, integrating memory and processing in a single unit to reduce data transfer time.
Researchers have witnessed a superfluid in graphene halt its motion, transitioning into a supersolid—a quantum phase blending solid-like order with frictionless flow. This breakthrough, achieved in bilayer graphene under specific conditions, challenges long-held assumptions about quantum matter. The findings, published in Nature, mark the first natural observation of such a phase without artificial constraints.
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Researchers have created a method to manage electronic friction in devices, potentially leading to more efficient technology. By using specific materials and applying pressure or voltage, they can reduce or eliminate this hidden energy loss. The breakthrough focuses on electron interactions in smooth surfaces.